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    • Plusieurs versions

    Increasing solar absorption for photocatalysis with black hydrogenated titanium dioxide nanocrystals

    Chen, Xiaobo, Liu, Lei, Yu, Peter Y, Mao, Samuel S
    Science (New York, N.Y.), 11 February 2011, Vol.331(6018), pp.746-50 [Revue évaluée par les pairs]

    • Livre
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    Fundamentals of semiconductors : physics and materials properties

    Yu, Peter Y
    Cardona, Manuel
    Berlin : Springer
    2010
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    Titre: Fundamentals of semiconductors : physics and materials properties / Peter Y. Yu, Manuel Cardona
    Auteur: Yu, Peter Y
    Contributeur: Cardona, Manuel
    Edition: 4th ed..
    Editeur: Berlin : Springer
    Date: 2010
    Collation: 775 p. : ill.
    Collection: Graduate texts in physics
    Documents dans cette collection: Graduate texts in physics
    Classification: LC QC611
    Identifiant: 9783642007095 (ISBN)
    No RERO: R008693828
    Permalien:
    http://data.rero.ch/01-R008693828/html?view=FR_V1

    • Article
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    High frequency local vibrational modes of oxygen doped CdSe

    Cheng, Wei, Liu, Lei, Yu, Peter Y.
    Journal of Applied Physics, 21 November 2013, Vol.114(19) [Revue évaluée par les pairs]
    © 2013 AIP Publishing LLC (AIP)
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    Titre: High frequency local vibrational modes of oxygen doped CdSe
    Auteur: Cheng, Wei; Liu, Lei; Yu, Peter Y.
    Sujet: Articles
    Description: Motivated by controversies over the identification of high frequency local vibrational modes (LMV) in CdSe doped with oxygen [G. Chen, J. S. Bhosale, I. Miotkowski, and A. K. Ramdas, Phys. Rev. Lett. 101 , 195502 (2008)], we have studied the LVM of complexes involving interstitial and substitutional O 2 , H 2 , and H 2 O molecules in CdSe by first-principle calculations. We found that our theoretical results can account for, both quantitative and qualitatively, the unusual LVM reported by the Purdue group in oxygen doped CdSe.
    Fait partie de: Journal of Applied Physics, 21 November 2013, Vol.114(19)
    Identifiant: 0021-8979 (ISSN); 1089-7550 (E-ISSN); 10.1063/1.4831938 (DOI)

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    Heavy p-type doping of ZnSe thin films using Cu 2 Se in pulsed laser deposition

    Zhang, Xiaojun, Man Yu, Kin, Kronawitter, Coleman X., Ma, Zhixun, Yu, Peter Y., Mao, Samuel S.
    Applied Physics Letters, 23 July 2012, Vol.101(4) [Revue évaluée par les pairs]
    © 2012 American Institute of Physics (AIP)
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    Titre: Heavy p-type doping of ZnSe thin films using Cu 2 Se in pulsed laser deposition
    Auteur: Zhang, Xiaojun; Man Yu, Kin; Kronawitter, Coleman X.; Ma, Zhixun; Yu, Peter Y.; Mao, Samuel S.
    Sujet: Semiconductors
    Description: Undoped, Cu-doped, Se-enriched, and Cu 2 Se-doped ZnSe films have been grown on fused quartz substrates by pulsed laser deposition. While the other films are highly resistive, Cu 2 Se-doped ZnSe films are p-type conducting with hole concentrations of ∼1.1 × 10 19 cm −3 and resistivities of ∼0.098 Ω cm (compared with previous reports of ∼1×10 18 cm −3 and ∼0.75 Ω cm). The exceptional heavy p-type doping of ZnSe films can be attributed to substitution of Zn atoms with Cu while limiting selenium-vacancy-associated compensating defects with additional selenium. This work is of importance to solve doping difficulties and contact problems of wide-bandgap semiconductors.
    Fait partie de: Applied Physics Letters, 23 July 2012, Vol.101(4)
    Identifiant: 0003-6951 (ISSN); 1077-3118 (E-ISSN); 10.1063/1.4739083 (DOI)

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    Zincblende-wurtzite phase transformation of ZnSe films by pulsed laser deposition with nitrogen doping

    Zhang, Xiaojun, Wang, Dandan, Beres, Matthew, Liu, Lei, Ma, Zhixun, Yu, Peter Y., Mao, Samuel S.
    Applied Physics Letters, 19 August 2013, Vol.103(8) [Revue évaluée par les pairs]
    © 2013 AIP Publishing LLC (AIP)
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    Titre: Zincblende-wurtzite phase transformation of ZnSe films by pulsed laser deposition with nitrogen doping
    Auteur: Zhang, Xiaojun; Wang, Dandan; Beres, Matthew; Liu, Lei; Ma, Zhixun; Yu, Peter Y.; Mao, Samuel S.
    Sujet: Semiconductors
    Description: Nitrogen-doped ZnSe films have been fabricated by pulsed laser deposition. It is found that the incorporation of nitrogen has resulted in a phase transformation from zincblende to wurtzite. By first-principles total energy calculations, two newly observed Raman peaks at 555 cm −1 and 602 cm −1 are assigned to vibration modes of N substituting Se in wurtzite and zincblende structures, respectively. This preference of wurtzite phase is consistent with previous prediction of the energy difference ΔE WZ − ZB between wurtzite structure and zincblende structure. This work opens a way to achieve stable ZnSe-based polytypism and may help understand the mechanisms of nitrogen doping in wide-bandgap semiconductors.
    Fait partie de: Applied Physics Letters, 19 August 2013, Vol.103(8)
    Identifiant: 0003-6951 (ISSN); 1077-3118 (E-ISSN); 10.1063/1.4819271 (DOI)

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    The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting

    Li, Kexue, Liu, Lei, Yu, Peter Y, Chen, Xiaobo, Shen, D Z
    Journal of Physics: Condensed Matter, 2016, Vol.28(18), p.185501 (10pp) [Revue évaluée par les pairs]

    • Plusieurs versions

    Hydrogenation and disorder in engineered black TiO2

    Liu, Lei, Yu, Peter Y, Chen, Xiaobo, Mao, Samuel S, Shen, D Z
    Physical review letters, 09 August 2013, Vol.111(6), pp.065505 [Revue évaluée par les pairs]

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    High pressure semiconductor physics: Looking toward the future on the shoulder of the past

    Yu, Peter Y.
    physica status solidi (b), 05/2011, Vol.248(5), pp.1077-1082 [Revue évaluée par les pairs]
    Wiley (via CrossRef)
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    Titre: High pressure semiconductor physics: Looking toward the future on the shoulder of the past
    Auteur: Yu, Peter Y.
    Sujet: Diamonds ; Insulators ; Inventions ; Modulation ; Raman Scattering ; Renewable Energy ; Semiconductors ; Spectroscopy ; Condensed Matter Physics (General) (So);
    Description: High pressure measurements attracted attention from the Semiconductor Physics community after the discovery of William Paul's Empirical Rule. The technique gained further momentum with the invention of the diamond-anvils high pressure cell. Since diamond is transparent from near IR to near UV many forms of optical spectroscopy (such as photoluminescence, modulation spectroscopy, and Raman scattering) have now been routinely carried out under high pressure. The fact that diamonds are also transparent to X-ray means structural phase transitions induced by pressure can be studied together with optical measurements. Further advances, such as electrical and magnetic measurements under hydrostatic (and sometimes quasi-hydrostatic) high pressure conditions, have established high pressure as a general, powerful, and indispensable technique in studying semiconductors. From a review of these past achievements I will attempt to 'predict' how high pressure techniques will impact semiconductor physics in the future. I will draw examples from areas as diverse as new materials for spintronics and renewable energies, topological insulators to possible multi-ferroic semiconductors.
    Fait partie de: physica status solidi (b), 05/2011, Vol.248(5), pp.1077-1082
    Identifiant: http://dx.doi.org/10.1002/pssb.201000708 (DOI)

    • Plusieurs versions

    MiR-34a regulates the invasive capacity of canine osteosarcoma cell lines

    Lopez, Cecilia M, Yu, Peter Y, Zhang, Xiaoli, Yilmaz, Ayse Selen, London, Cheryl A, Fenger, Joelle M
    PloS one, 2018, Vol.13(1), pp.e0190086 [Revue évaluée par les pairs]

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    Comment on “Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices” [Appl. Phys. Lett. 76 , 586 (2000)]

    Yu, Peter Y.
    Applied Physics Letters, 19 February 2001, Vol.78(8), pp.1160-1161 [Revue évaluée par les pairs]
    © 2001 American Institute of Physics (AIP)
    Disponible
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    Titre: Comment on “Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices” [Appl. Phys. Lett. 76 , 586 (2000)]
    Auteur: Yu, Peter Y.
    Sujet: Comments
    Description: No abstract prepared.
    Fait partie de: Applied Physics Letters, 19 February 2001, Vol.78(8), pp.1160-1161
    Identifiant: 0003-6951 (ISSN); 1077-3118 (E-ISSN); 10.1063/1.1350589 (DOI)